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| FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK January 2006 FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications Features * * * * High Speed Switching Low Saturation Voltage: VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance C G GCE TO-3P E TC = 25C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C FGA50N100BNTD 1000 25 50 35 100 15 156 63 -55 to +150 -55 to +150 300 Units V V A A A A W W C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.8 2.4 25 Units C/W C/W C/W (c)2006 Fairchild Semiconductor Corporation FGA50N100BNTD Rev. A www.fairchildsemi.com FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK Package Marking and Ordering Information Device Marking FGA50N100BNTD Device FGA50N100BNTDTU Package TO-3P Packaging Type Rail / Tube Qty per Tube 30ea Max Qty per Box - Electrical Characteristics of IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VCE = 1000V, VGE = 0V VGE = 25, VCE = 0V 1000 ------1.0 500 V mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V 4.0 --5.0 1.5 2.5 7.0 1.8 2.9 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=10V, VGE = 0V, f = 1MHz ---6000 260 200 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 60A, RG = 51, VGE=15V, Resistive Load, TC = 25C VCE = 600 V, IC = 60A, VGE = 15V , , TC = 25C -------140 320 630 130 275 45 95 ---250 350 --ns ns ns ns nC nC nC Electrical Characteristics of DIODE T Symbol VFM trr IR Parameter Diode Forward Voltage Diode Reverse Recovery Time Instantaneous Reverse Current C = 25C unless otherwise noted Test Conditions IF = 15A IF = 60A IF = 60A di/dt = 20 A/us VRRM = 1000V Min. ---- Typ. 1.2 1.8 1.2 0.05 Max. 1.7 2.1 1.5 2 Units V V us uA www.fairchildsemi.com FGA50N100BNTD Rev. A FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK 100 Common Emitter o TC = 25 C Collector Current, I C [A] 80 20V 15V 10V 9V 90 8V 80 70 60 50 40 30 20 10 0 0 Common Emitter VGE = 15V Tc = 25 C o Tc = 125 C o 60 40 7V 20 VGE = 6V 0 1 2 3 4 5 0 Collector Current, I C [A] Collector-Emitter Voltage, VCE [V] 1 2 3 4 Collector-Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 10 Collector-Emitter Voltage, VCE [V] Common Emitter VGE=15V Common Emitter O TC= - 40 C Collector-Emitter Voltage, VCE[V] 3 80A 60A 8 6 2 30A 4 30A 60A 80A IC=10A 1 -50 0 50 o 2 IC=10A 0 4 8 12 16 20 100 150 Case Temperature, TC [ C] Gate-Emitter Voltage, VGE [V] Fig 3. Saturation Voltage vs. Case Temperature at Varient Current Level Fig 4. Saturation Voltage vs. VGE 10 Common Emitter o TC = 25 C 10 Common Emitter o TC = 125 C Collector-Emitter Voltage, VCE [V] 8 Collector-Emitter Voltage, VCE [V] 8 6 30A 4 60A 80A 2 IC = 10A 0 4 8 12 16 20 6 30A 60A 80A 4 2 IC = 10A 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE www.fairchildsemi.com FGA50N100BNTD Rev. A FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK 10000 Cies 10000 V CC =600V, IC =60A V GE = +/-15V Capacitance [pF] T C =25 C o Tdoff Tr T don Tf Coes 100 Common Emitter VGE = 0V, f = 1MHz TC = 25 C 0 5 10 15 20 25 30 o Cres Switching Time [ns] 1000 1000 100 10 0 50 100 150 200 Collector-Emitter Voltage, VCE [V] Gate Resistance, R G [ ] Fig 7. Capacitance Characteristics Fig 8. Switching Characteristics vs. Gate Resistance 20 1000 V CC= 6 0 0 V , R g = 5 1 V G E = + /-1 5 V , T C = 2 5 C T d o ff o Common Emitter VCC=600V, RL=10 TC=25 C o Gate-Emitter Voltage,VGE [V] 15 Switching Time [ns] 10 Tf Tr 5 100 T don 0 10 20 30 40 50 60 0 50 100 150 200 250 300 C o lle cto r C urre nt, IC [A ] Gate Charge, Qg [nC] Fig 9. Switching Characteristics vs. Collector Current Fig 10. Gate Charge Characteristics 1 100 Ic MAX (Pulsed) Ic MAX (Continuous) 100s 10 DC Operation 1 1ms 50s 0.5 0.2 Thermal Response [Zthjc] Collector Current, Ic [A] 0.1 0.1 0.05 0.02 0.01 singlepulse 0.01 0.1 0.01 0.1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 1 10 100 1000 1E -3 1E -5 1E -4 1E -3 0.01 0.1 1 10 Collector - Emitter Voltage, V CE [V] R ectangular P D ulse uration[sec] Fig 11. SOA Characteristics Fig 12. Transient Thermal Impedance of IGBT www.fairchildsemi.com FGA50N100BNTD Rev. A FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK 100 1.2 IF= 60 A TC= 25 C o 120 Reverse Recovery Time, trr [us] Forward Current, IF[A] T C = 100 C 10 T C = 25 C 1 o o 1.0 100 Reverse Recovery Current Irr [A] 0.8 trr 0.6 80 60 0.4 40 0.2 Irr 20 0.1 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0 40 80 120 160 200 0 240 Forward Voltage, V FM [V] di/dt [A/us] Fig 13. Forward Characteristics Fig 14. Reverse Recovery Characteristics vs. di/dt 1.2 Reverse Recovery Time, trr [us] di/dt=-20A/us o TC=25 C 12 1000 100 Reverse Recovery Current Irr [A] Reverse Current, IR [uA] 1.0 trr 10 T C = 150 C o 10 1 0.1 0.01 1E-3 T C= 25 C o 0.8 Irr 8 0.6 6 0.4 4 10 20 30 40 50 60 0 300 600 900 Forward Current, IF [A] Reverse Voltage, V R [V] Fig 15. Reverse Recovery Characteristics vs. Forward Current Fig 16. Reverse Current vs. Reverse Voltage 250 TC = 25 C o 200 Capacitance, Cj [pF] 150 100 50 0 0.1 1 10 100 Reverse Voltage, VR [V] Fig 17. Junction capacitance www.fairchildsemi.com FGA50N100BNTD Rev. A FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK Package Dimension TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters www.fairchildsemi.com FGA50N100BNTD Rev. A FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 www.fairchildsemi.com FGA50N100BNTD Rev. A Preliminary No Identification Needed Full Production Obsolete Not In Production |
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